2SA1586 -0.15 a, -50 v pnp silicon plastic encapsulated transistor elektronische bauelemente 25-jan-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ??? ? base ? emitte r collector ? ? features ? high dc current gain ? high voltage and high current ? complementary to 2sc4116 ? small package applications ? general purpose amplification classification of h fe package information package mpq leadersize sot-323 3k 7? inch absolute maximum ratings (t a = 25c unless otherwise noted) parameter symbol ratings unit collector to base voltage v cbo -50 v collector to emitter voltage v ceo -50 v emitter to base voltage v ebo -5 v collector current - continuous i c -150 ma collector power dissipation p c 100 mw thermal resistance junction to ambient r ja 1250 c / w junction and storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise noted) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v ( br ) cbo -50 - - v i c = -100 ? a, i e = 0 collecto r to emitter breakdown v (br)ceo -50 - - v i c = -1ma, i b = 0 emitter to base breakdown voltage v (br)ebo -5 - - v i e = -100 ? a, i c = 0 collector cut-off current i cbo - - -100 ? a v cb = -50v, i e = 0 emitter cut-off current i ebo - - -100 ? a ? v eb = -5v, i c = 0 dc current gain h fe 70 - 400 v ce = -6v, i c = -2ma collector to emitter saturation voltage v ce(sat) - - -0.3 v i c = -100ma, i b = -10ma transition frequency f t 80 - - mhz v ce = -10v, i c = -1ma collector output capacitance c ob - - 7 pf v cb = -10v, i e = 0, f = 1mhz product-rank 2SA1586-o 2SA1586-y 2SA1586-gr(g) range 70~140 120~240 200~400 marking so sy sg rohs compliant product a suffix of ?-c? specifies halogen & lead-free sot-323 top view a l c b d g h j f k e 1 2 3 1 2 3 ref. millimete r ref. millimete r min. max. min. max. a 1.80 2.20 g 0.100 ref. b 1.80 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.25 d 0.80 1.10 k - - e 1.20 1.40 l 0.650 typ. f 0.20 0.40
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